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| Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-89 package which is designed for low power surface mount applications, where board space is at a premium. LDAN222T1 3 * Fast trr * Low CD * Available in 8 mm Tape and Reel 1 2 SC-89 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc 3 CATHODE 1 ANODE 2 ANODE THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Range 1. t = 1 S Symbol PD TJ Tstg Max 150 150 -55 to +150 Unit mW C C ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 mA IR = 100 A VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 , Irr = 0.1 IR Min -- -- 80 -- -- Max 0.1 1.2 -- 3.5 4.0 Unit Adc Vdc Vdc pF ns Driver Marking LDAN222T1=N9 LDAN222T1-1/3 LDAN222T1 Electrical characteristic curves Figure 1. Forward Voltage Figure 2. Reverse Current Figure 3. Diode Capacitance RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE LDAN222T1-2/3 LDAN222T1 SC-89 NOTES: 1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2.CONTROLLING DIMENSION: MILLIMETERS 3.MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4.463C-01 OBSOLETE, NEW STANDARD 463C-02. LDAN222T1-3/3 |
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